? 2000 ixys all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 150 c 150 v v dgr t j = 25 c to 150 c; r gs = 1 m 150 v v gs continuous 20 v v gsm transient 30 v i d25 t c = 25 c80a i dm t c = 25 c, pulse width limited by t jm 320 a i ar t c = 25 c80a e ar t c = 25 c45mj e as t c = 25 c 1.5 j dv/dt i s i dm , di/dt 100 a/ s, v dd v dss , 5 v/ns t j 150 c, r g = 2 p d t c = 25 c 360 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6 mm (0.063 in) from case for 10 s 300 c m d mounting torque to-247 1.13/10 nm/lb.in. to-264 0.9/6 nm/lb.in. weight to-247 6 g to-264 10 g to-268 4 g hiperfet tm power mosfets q-class n-channel enhancement mode avalanche rated, high dv/dt, low q g features low gate charge international standard packages epoxy meet ul 94 v-0, flammability classification low r ds (on) hdmos tm process rugged polysilicon gate cell structure avalanche energy and current rated fast intrinsic rectifier advantages easy to mount space savings high power density symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v dss v gs = 0 v, i d = 250 ua 150 v v gs(th) v ds = v gs , i d = 4 ma 2.0 4.0 v i gss v gs = 20 v dc , v ds = 0 100 na i dss v ds = v dss t j = 25 c25 a v gs = 0 v t j = 125 c1ma r ds(on) v gs = 10 v, i d = 0.5 ? i d25 22.5 m pulse test, t 300 s, duty cycle d 2 % g = gate s = source tab = drain 98725 (05/31/00)
(tab)
(tab) g s to-264 aa (ixfk) s g d d (tab) ixfh 80n15q ixfk 80n15q ixft 80n15q v dss = 150 v i d25 = 80 a r ds(on) = 22.5 t rr 200 preliminary data sheet 4 .com u datasheet
ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 10 v; i d = 0.5 i d25 , pulse test 35 50 s c iss 4500 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 1400 pf c rss 680 pf t d(on) 30 ns t r v gs = 10 v, v ds = 0.5 v dss , i d = 0.5 i d25 55 ns t d(off) r g = 2.0 (external), 68 n s t f 20 ns q g(on) 180 nc q gs v gs = 10 v, v ds = 0.5 v dss , i d = 0.5 i d25 39 nc q gd 85 nc r thjc 0.35 k/w r thck to-247 0.25 k/w to-264 0.15 k/w dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc terminals: 1 - gate 2 - drain 3 - source tab - drain 1 2 3
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% ixfh 80n15q ixfk 80n15q ixft 80n15q to-264 aa outline millimeter inches min. max. min. max. a 4.82 5.13 .190 .202 a1 2.54 2.89 .100 .114 a2 2.00 2.10 .079 .083 b 1.12 1.42 .044 .056 b1 2.39 2.69 .094 .106 b2 2.90 3.09 .114 .122 c 0.53 0.83 .021 .033 d 25.91 26.16 1.020 1.030 e 19.81 19.96 .780 .786 e 5.46 bsc .215 bsc j 0.00 0.25 .000 .010 k 0.00 0.25 .000 .010 l 20.32 20.83 .800 .820 l1 2.29 2.59 .090 .102 p 3.17 3.66 .125 .144 q 6.07 6.27 .239 .247 q1 8.38 8.69 .330 .342 r 3.81 4.32 .150 .170 r1 1.78 2.29 .070 .090 s 6.04 6.30 .238 .248 t 1.57 1.83 .062 .072 dim. terminals: 1 - gate 2 - drain 3 - source tab - drain 4 .com u datasheet
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